10-060 Metal oxide semiconductor (MOS) gated device threshold voltage shift using atomic layer deposition (ALD) of silicon dioxide

Authors

• Veena Misra

Abstract

This invention is the deposition of silicon dioxide on GaN/AlGaN via atomic layer deposition with intention to create a metal oxide semiconductor (MOS) gated electrical device.  This oxide can additionally serve as surface passivation for GaN or AlGaN devices.