10-060 Metal oxide semiconductor (MOS) gated device threshold voltage shift using atomic layer deposition (ALD) of silicon dioxide

December 21, 2016

Are you interested in this project? Contact Us.



This invention is the deposition of silicon dioxide on GaN/AlGaN via atomic layer deposition with intention to create a metal oxide semiconductor (MOS) gated electrical device.  This oxide can additionally serve as surface passivation for GaN or AlGaN devices.


Do you agree to the terms and conditions regarding intellectual property contained in the Membership Bylaws signed by your company representative?