Ashish Kumar

My research work is primarily focussed on high voltage 4H-SiC power devices (JFETs, MOSFETs and IGBTs) for medium voltage (>6kV) applications.

Highlights:

  • Design, fabrication and device modeling of 4H-SiC n-IGBTs (>15kV)
  • Electrical switching and conduction characterization of high voltage 4H-SiC power devices
  • Active gate drive techniques for high voltage 4H-SiC power devices
  • Medium voltage power converters (>6kV) using modern high voltage 4H-SiC power devices
  • High bandwidth current sensing and current control techniques

Title

Graduate Research Asst
PhD Student [2015 - Present]

Type of Degree Degree Program School Year
Bechelor of Technology Electrical Engineering Indian Institute of Technology, Kharagpur 2008
Master of Science Electrical Engineering Indian Institute of Science, Bangalore 2014

Research Areas

  • Power Electronics