Ashish Kumar

My research work is primarily focussed on high voltage 4H-SiC power devices (JFETs, MOSFETs and IGBTs) for medium voltage (>6kV) applications.

Highlights:

  • Design, fabrication and device modeling of 4H-SiC n-IGBTs (>15kV)
  • Electrical switching and conduction characterization of high voltage 4H-SiC power devices
  • Active gate drive techniques for high voltage 4H-SiC power devices
  • Medium voltage power converters (>6kV) using modern high voltage 4H-SiC power devices
  • High bandwidth current sensing and current control techniques

Title

Graduate Research Asst
PhD Student [2015 - Present]

Type of DegreeDegree ProgramSchoolYear
Bechelor of TechnologyElectrical EngineeringIndian Institute of Technology, Kharagpur2008
Master of ScienceElectrical EngineeringIndian Institute of Science, Bangalore2014

Research Areas

  • Power Electronics