13-028 Orthogonal Positive Bevel Termination for SiC Chip-size Reverse Blocking Devices

December 20, 2016

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As the new generation semiconductor for high power devices, SiC have demonstrated its high performance in high power, high temperature applications. However, due to fabrication difficulties, it is very hard to make reverse blocking edge terminations for SiC symmetric blocking switches. Our new structure and fabrication process allow IGBTs or thyristors to have reverse blocking capabilities.

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